DocumentCode :
4808
Title :
Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy
Author :
Gary S. May استاد راهنما
University :
Georgia University Of Technology
Grade :
دكتري
Major :
Doctor of Philosophy
Number of pages :
0
Publish Date :
2004
Keyword :
Semiconductors-Materials , Electron mobility , Molecular beam epitaxy.
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=4808
