DocumentCode :
6037
Title :
Etch rate modification by implantation of oxide and polysilicon for planar double gate MOS fabrication
Author :
Collaert Nadine استاد مشاور , Bayot Vincent استاد راهنما
University :
UCL )Les Bibliotheques de L,Universite Catholique de Louvain(
Grade :
دكتري
Major :
FSA 3 - Doctorat en sciences appliqu{ف }es
Number of pages :
0
Publish Date :
2007
Keyword :
Etch rate modification , Planar double gate , Buried mask , Etching selectivity , Ion implantation
Note :
01
Language :
انگليسي
Link To Document :
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