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Characterization of Pure and Antimony Doped Sn02 Thin Films Prepared by the Sol-Gel Technique

Novinrooz Abdoljavad نويسنده , Sarabadani Parvin نويسنده , Garousi Javad نويسنده

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Pure and antimony doped Sn02 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material SnCI2.2H20 as a host and SbCl3 as a dopant. Our experimental results revealed that, the quality ofthe coatedfilms on the glass depends on process parameters. The effect of annealing temperature, dipping numbers and the dopant concentration on the structural and electrical properties were investigated. Duration ofcoating and dragging speed for each sample were 3 minutes and 90cm/min respectively. The films Characterization was carried out by X-ray diffraction pattern (XRD) and scanning electron microscopy (SEM). The XRD results showed the amorphous structure ofdeposited sample at 350°C. Beyond this temperature (350°C), the preferred plane with a random textured shifts to (101). By additionof25g/litantimonyat550°C,thepreferredplaneshiftsto(200). Theelectricalproperties weredeterminedby fourpointprobestechnique. Addition of25g/litantimonyat550°Cwasreduced theresistivity oftheSn02films to0.94x10-4(o.cm).

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