عنوان مقاله :
Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement
پديد آورندگان :
Abdulaziz, Abdulsamee F. University of Tikrit - Department of Physics, Iraq , Mohamamed, Subry J. University of Tikrit - Department of Physics, Iraq , Khaleel, Khalaf I. University of Tikrit - Department of Physics, Iraq
چكيده عربي :
لا يمكن إدراج ملخص المقال
چكيده لاتين :
Schottky barrier-type devices are rectifying metal-semiconductor (M-S) structure. This device is used in microelectronics, in solar cell applications, and in chemical sensing [1]. In the Schottky model the amount of band bending is equal to the difference between the work functions, Φm and Φs of the metal and semiconductor respectively. Thus qVi =Φm - Φs
كليدواژه :
schottky diode current , Ag-BaF2-GaSb , versus voltage , photoelectric measurement , capacitance with voltage
عنوان نشريه :
مجله كليه التربيه الاساسيه للعلوم التربويه و الانسانيه
