تاثير اشعة كاما علي الانتقالات الالكترونية لاغشية SnO2 الرقيقة و المشوبة بالفلور و المحضرة بطريقة الترسيب الكيميايي الحراري

Thin films of SnO2 and SnO2:F have been prepared using SnC12, 2H2O with a new preparation conditions utilizing chemical spray pyrolysis. The absorbance and transmittance spectra have been recorded in the spectrum range (300-900)nm, in order to obtain the absorption coefficient, kind of transition The value of the forbidden energy gap for direct and indirect allowed transition were found to be decrease as the doping percentage increased except for 1% doping. Where the energy gap value of the direct allowed transition was 3.50 eV for the undoped films before irradiation and increase to 3.60 eV for 1% doping, then it value decrease from 3.10 eV as the percentage of doping increased, for the indirect allowed transition it seems to have the same behavior but the value of the energy gap were less than its value before irradiation. The value of the forbidden energy gap after irradiation were more than it's value for the direct allowed transition and indirect allowed transition before irradiation, where the energy gap value for direct allowed transition 3.65 eV for the undoped sample and increase to 3.8 eV for 1% doping and decrease to 3.4 eV. The value of the indirect allowed transition were seems to have the same behavior for the values of the energy gap but its values were less in comparison with their values before irradiation.