Effect of Incident Ray Angle and Optical lens on Solar Cell Performance

Silicon solar cell (p-n junction type) was used in this research an active area of 224 cm² with for measuring the voltage and current values were for different angles of incident ray (θ). a comparison between (θ) and (θF) when a fresnel lenses with an active area of 64 cm² were used at 26 °C with average value during the measurements. The maximum values of voltage and current (VMAX ,IMAX) for each incident angle was measured and thus the filling factor (F.F) , was also measured through determination of IS.c and Vo. c for closed and open of solar cell circuit . In results indicated The filling factor was proportional with (I MPP,V MPP) depending on ability of charge distribution for P-N silicon system with increasing or decreasing depletion layer , obtaining current about 3، 62 Amp with lens and this is a large magnitude with respect of 1،3 Amp with incident angles(0°).