Single Layer Anti-Reflection Coating for near Infrared Region

Thermal evaporation method was employed to deposit silicon monoxide (SiO) as a single layer anti- reflection coating (ARC s) in the near IR region (1- 3) μm.SiO deposited on both sides with two types of Si substrates intrinsic and extrinsic. The film thickness was 233، 6 nm and the deposition rate 0، 5 nm/s. The maximum transmittance at1، 7 μm for the intrinsic type increase to 82%, while for extrinsic Si substrate with thickness (0، 5،1 ، 1، 5) mm increase to (61%، 51%، 50%) respectively. The toleration of the prepared films was studies using Nd-glass laser system output energy 10J, pulse duration nearly 300 μs using different tests. In the first test, different energy density for a single shot was used to determine the damage threshold which was 7،34J/cm². In the second test ,the same energy was used (less than the damage threshold) but with different number of shots until thedamage threshold was reached . The time interval between shoots was Sec .