دراسة الخصائص الكهربائية للمفرق الهجين (p-CdTe/n-Si)

In this research we have made the heterojunction device (p CdTe/n-Si) by using Aluminum and Gold metals with high purity (99.999%) as O’hmic contact by vacuum thermal evaporation technique. From I-V measurements the ideality factor (n) and saturation current (Io) has been found in different temperature (100, 200, 300K). Through C-V measurements we found built – in potential (Vbi), the acceptor density (NA), the difference between Fermi level and conduction band (n), the difference between Fermi level and valance band (p), the conduction band discontinuity (EC), the valence band discontinuity (EV) and the depletion regions width (Xn, Xp) to heterojunction (p-CdTe/n-Si) of the frequencies (1,0.5,0.2MHz).