• شماره ركورد
    70534
  • عنوان مقاله

    Using Wet Dry Etching technologies to etch Si-Wafers

  • پديد آورندگان

    k. Abd, Intessar College of Education - Computer department, Iraq

  • از صفحه
    86
  • تا صفحه
    97
  • تعداد صفحه
    12
  • چكيده عربي
    لا يمكن إدراج ملخص المقال
  • چكيده لاتين
    In this paper used wet etching and dry etching technologies to etch Si-pType samples, the result were: - * wet etching (Isohopic etch, low damage on the surface, High selectivity, Smooth surface). *dry etching (Anisotropic etch, High damage on the surface, [ow selectivity, Roughness surface). Therefore, we can say that Dry or plasma etching has presented solutions to virtually all of the difficulties associated with wet etching.
  • كليدواژه
    etch Si-Wafers , Wet Dry Etching technologies
  • سال انتشار
    2010
  • عنوان نشريه
    مجله كليه التربيه
  • عنوان نشريه
    مجله كليه التربيه