شماره ركورد
70534
عنوان مقاله
Using Wet Dry Etching technologies to etch Si-Wafers
پديد آورندگان
k. Abd, Intessar College of Education - Computer department, Iraq
از صفحه
86
تا صفحه
97
تعداد صفحه
12
چكيده عربي
لا يمكن إدراج ملخص المقال
چكيده لاتين
In this paper used wet etching and dry etching technologies to etch Si-pType samples, the result were: - * wet etching (Isohopic etch, low damage on the surface, High selectivity, Smooth surface). *dry etching (Anisotropic etch, High damage on the surface, [ow selectivity, Roughness surface). Therefore, we can say that Dry or plasma etching has presented solutions to virtually all of the difficulties associated with wet etching.
كليدواژه
etch Si-Wafers , Wet Dry Etching technologies
سال انتشار
2010
عنوان نشريه
مجله كليه التربيه
عنوان نشريه
مجله كليه التربيه
لينک به اين مدرک