Influence of annealing temperature and deposition rate on the enerry gap of CdSe thin lilms

CdSe thin films (360110 nm) were deposited onto glass substrate by using thermal evaporation technique. Thin films of deposition rate in range (0.8, 1.0, 1.2 nm/sec) were annealed at different temperature rang (303 - 473 K). CdSe films shows allow and direct energy gap (1.71-1.98 eV), which is study as function of annealing temperature and rate deposition. Annealing at (423 K) causes increase energy gap to while annealing at (373 K) and (473 K) cause s decreases in energy gap. Rate deposition at (1.0 nrn/sec) shows increasing in energy gap for all annealing temperature.