MSM-Photodetectors Based on AlxGa1-xN/GaN Heterostructures Grown on Si(111) by Molecular Beam Epitaxy

This research has been fabricated and studied the structural, optical and electrical characterization of photo-detectors of AlxGa1-xN based metalsemiconductor- metal (MSM) grown on Si (111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) are presented. X-ray diffraction (XRD) measurements revealed that the sample I (Al0.24Ga0.76N/GaN) and sample II (Al0.43Ga0.57N/GaN) were epitaxially grown on Si substrates. FWHM for samples I and II were equal to 0.69 and 0.65o respectively. The Schottky barrier height and ideality factor for samples I and II were equal to 0.60, 0.67 eV and 1.29, 1.32 respectively. Maximum peak responsivity for sample I was 0.123 A/W at 305 nm and for sample II, maximum peak responsivity was 0.864 A/W at 275 nm.