الخصائص البصرية لنبيطة المفرق المتباين (n-Ge / p-GaAs)

In this paper, heterojunction will be prepared using Galuim Arsanide (GaAs) slices as a substrate Germanium will be evaporated to be used as thin film on the substrate. Hetero junction samples for (Ge / P- GaAs) were preparing using (Ge-Au) with (0.12- 0.88) respectively. All these samples were annealed at (673 K) for 30 minutes. Spectral response, Detectivity efficiency, quantum efficiency, specific detectivity of equivalent noise power were evaluated through the measurement of optical current characteristics for this hetero junction, to study its usability in IR and near IR detect system.