Bode Stability Analysis for Graphene Nanoribbon Interconnects Used in 3D-VLSI Circuits

Bode Stability Analysis for Graphene Nanoribbon Interconnects Used in 3D-VLSI Circuits

Bode stability analysis based on transmission line modeling (TLM) for Graphene nanoribbon (GNR) interconnects used in 3D-VLSI circuits is investigated for the first time. In thisanalysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the geometry ofeach ribbon has been acquired. It is shown that, increasing the length and width of 3D structure, MLGNR interconnects become more stable