شماره ركورد كنفرانس :
1730
عنوان مقاله :
Simulation and Analysis of Quantum Dot Laser Based on Tunneling Injection
عنوان به زبان ديگر :
Simulation and Analysis of Quantum Dot Laser Based on Tunneling Injection
پديدآورندگان :
Hashtroodi M نويسنده , Rostami A نويسنده , Ghazisaeedi N نويسنده
كليدواژه :
Tunneling effect , GS , QD-TI lasers , ES , equivalent circuit model
عنوان كنفرانس :
بيستمين كنفرانس مهندسي برق ايران
چكيده لاتين :
In this paper we propose a new circuit model for a tunneling injection quantum dot lasers (TI-QDL). The detail of our model is based on independent rate equations. The carrierdensity, optical modes and their powers are described independently. The proposed equivalent circuit is simulated bya Pspice and the results are compared with a model that the rate equations are solved numerically
شماره مدرك كنفرانس :
4460809
