شماره ركورد كنفرانس :
2727
عنوان مقاله :
Plasmonic pin-photodiode in InGaAsP layer stack
عنوان به زبان ديگر :
Plasmonic pin-photodiode in InGaAsP layer stack
پديدآورندگان :
Nikoufard Mahmoud نويسنده University of Kashan - Faculty of Electrical and Computer Engineering - Department of Electronics , Bidgoli Joushaghani Fatemeh نويسنده University of Kashan - Faculty of Electrical and Computer Engineering - Department of Electronics
كليدواژه :
hybrid plasmonic waveguide , pin-photodiode , InGaAsP materials
عنوان كنفرانس :
اولين كنفرانس بين المللي دستاوردهاي نوين پژوهشي در مهندسي برق و كامپيوتر
چكيده لاتين :
In this article the photocurrent response of a novel ultra-small on-chip InP-based plasmonic pin-photodiode is
analyzed at optical communication wavelength of 1.55 μm. When light propagates along a hybrid plasmonic InP-based waveguide, it couples to the plasmonic pin-photodiode and absorbs in the InGaAs absorption layer to generate photocurrent. The InP/InGaAsP pin-photodiode is optically simulated utilizing a three dimensional finite difference time domain (FDTD) method. The photo-response characteristics of InP-based photodiode, which depends on device structure parameters and biasing operation conditions, are discussed. Theoretical analysis for calculating 3 dB bandwidth as a function of device geometry is then presented. An internal quantum efficiency of 95% and a 3- dB bandwidth of over 70 GHz is determined for a 1.5 μm long and 1 μm wide device.
شماره مدرك كنفرانس :
4240260
