پديدآورندگان :
Mandani Koutiani Saeed sss68ok@gmail.com Physics Department, Urmia University, Urmia, Iran , Ahmadi MohammadTaghi mt.ahmadi@urmia.ac.ir Nanotechnology Research Center, Nano electronic Research Group, Physics Department, Urmia University, Urmia, Iran Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310, UTM Johor Bahru, Johor, Malaysia , KhademHosseini Vahideh v.khademhoseini @urmia.ac.ir Department of Electrical Engineering, Pardis of Urmia University, Urmia, Iran Department of Electrical and Computer Engineering, University of Kashan, Kashan, Iran v.khademhoseini @urmia.ac.ir , Ismail Razali razali@fke.utm.my Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310, UTM Johor Bahru, Johor, Malaysia
چكيده فارسي :
The downscaling of transistor according to famous moor s low causes
leakage current as its operation limitation. Therefore technology needs
to nano device such as quantum dot transistor. The quantum dot has
small size and zero dimension, so it can be used in nano transistor.
Quantum dot material effects on the operation speed of transistor, so
selecting its material is important.in this paper, quantum dot transistor
two fullerene forms 36 C and 180 C are designed and then are simulated
with Atomistix ToolKit software. Their stability diagrams are compared
together. As a result bigger fullerene molecule in quantum dot
transistor has smaller coulomb blockade range and better operation.
Therefore length of quantum dot has direct effect on coulomb
blockade of quantum dot transistor.
