شماره ركورد كنفرانس :
3834
عنوان مقاله :
ELECTRONIC PROPERTIES OF SILICON CARBIDE NANOSHEET
پديدآورندگان :
Delavari Najme Department of Physics, Faculty of Science, University of K.N.Toosi, Tehran Iran , Jafari Mahmoud jafari@kntu.ac.ir Department of Physics, Faculty of Science, University of K.N.Toosi, Tehran Iran;
كليدواژه :
silicon carbide , physical properties
عنوان كنفرانس :
نوزدهمين سمينار شيمي فيزيك ايران
چكيده فارسي :
Different structures of silicon carbide has been synthetized. In this paper, we ve studied the physical properties of silicon carbide nanosheet, using the Density Functional Theory (DFT). The result have shown that this structure is a semiconductor with a wide band gap. The value that we ve achieved was 2.5851 eV which is in agreement with previous calculations.
