شماره ركورد كنفرانس :
3834
عنوان مقاله :
ELECTRONIC PROPERTIES OF ZINC-BLEND AND WURTZITE STRUCTURES OF Ga1-XInXN COMPOUND
پديدآورندگان :
Arabhajji Narges n_arabhajji@shahroodut.ac.ir Department of physics, University of Shahrood, Shahrood, 3619995161, Iran; , Movlarooy .T narsis_138888@yahoo.com Department of physics, University of Shahrood, Shahrood, 3619995161, Iran;
كليدواژه :
Ga1 , xInxN , zinc blende , wurtzite , LDA
عنوان كنفرانس :
نوزدهمين سمينار شيمي فيزيك ايران
چكيده فارسي :
The electronic properties of zinc blende (Zb) and wurtzite (Wz) structures of Ga1-xInxN compound are calculated systematically based on density functional theory using the Local Density Approximation (LDA). Results show that GaN is a typical direct band gap semiconductor. This provides a theoretical basis for the design and application of GaN compounds for the optoelectronic materials.
