پديدآورندگان :
Nayeri Maryam nayeri@iauyazd.ac.ir Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, I , Fathipour Morteza mfathi@ut.ac.ir School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran , Yazdanpanah Goharrizi Arash ar_yazdanpanah@sbu.ac.ir Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, Iran
كليدواژه :
MoS2 , spin , orbit coupling , tight binding , strain
چكيده فارسي :
In this paper the effect of spin-orbit coupling (SOC) as well as uniaxial tensile strain on the electrical properties of monolayer MoS2 has been studied. For this purpose a tight binding model has been employed. Incorporating SOC allows for accurate determination of electronic band structure for the complex monolayer MoS2 structure. Our results indicate a large splitting of the valence band equal to 148 meV and a minimal splitting of the conduction band (9 meV). Th ese results are in excellent agreement with the experimental data. We have also applied uniaxial tensile strain to the monolayer MoS2 along the zigzag direction. Th e results demonstrate a transition from a direct band gap to an indirect band gap. Moreover, increasing tensile strain causes a decrease in the band gap.
