SWSiNTs: DOS variations due to mechanical deformations

In this paper we investigate the density of states of hexagonal silicon nanotubes. Next, we continue with the investigation of the effects two types of mechanical deformations, namely uniaxial and torsional strains on the DOS of Single Walled Silicon Nanotubes (SWSiNTs). We use tight binding model to perform DOS calculations and work out the appropriate results. It is shown that the application uniaxial and torsional strains in some cases cause the DOS near the band gap to increase, in some other ones to decrease and in some certain cases does not change the DOS near the band edge.