پديدآورندگان :
Mahmoudi Zohreh mahmoudi@stu.nit.ac.ir Resarch Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran , Azizollah Ganji Bahram baganji@nit.ac.ir Resarch Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran , Razeghi Alieh Razeghi.alieh@nit.ac.ir Resarch Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran , Saberhosseini Shirin sh.saberhosseini@stu.nit.ac.ir Resarch Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran
كليدواژه :
CNTFET , NEGF , SDC , DMG , CNTFET , leakage current
چكيده فارسي :
In this work, a novel type of dual material gate carbon nanotube filed-effect transistor, with stepwise doping profile channel (SDC-DMG-CNTFET) is proposed, and simulated using with self-consistent solution of the two dimensional Poisson– Schrodinger equation, within the non-equilibrium Green’s function (NEGF) formalism. The doping concentration of SDCDMG channel is at maximum level at drain/source side and is reduced stepwise toward zero at the middle of channel. The results show that the new structure decreases significantly the leakage current, Increases On current, so increases On/Off current ratio. In comparison with dual material gate structure, this structure on CNTFET enhances the device performance
