پديدآورندگان :
Habibi Esmaeil e.habibi@urmia.ac.ir Nanotecnology Research Center, Urmia University , Khoramak Elnaz - Nanotecnology Research Center, Urmia University
چكيده فارسي :
The electrodeposition of gold is a key technology in the fabrication of many microelectronic, optoelectronic and microsystem devices [1]. In the MEMS field, the gold film is increasingly drawing attention for its low electrical resistivity, high physicochemical stability, high biocompatibility and high reflectivity to the infrared ray [2]. In this study, electrochemical deposition of thick film gold on the surface of microchips accelerometers used in car airbag was paid. As study has been preformed to select optimum process conditions (temperature, PH, reagent Concentration, deposition time, etc.) in gold deposition on silicon wafer from sulphite/thiosulphate electrolytic baths. Gold deposits have been obtained by electrochemical techniques such as constant potential, constant current, by transfer control, at pH value (6) and temperature (60 ºC). Our purpose in this project is electrosynthesis gold with low permeability and high density.