اندازه گيري جذب اپتيكي سيليكان متخلخل بر پايه ي مستقل

Porous Silicon are prepared from p-type Si wafer by electrochemical method with etching times of 10, 20, 30, 40 min. SEM top and cross section views are measured and showed that with increasing etching time, thickness of porous layer and porosity increases. Also, absorbance of samples is decreased with increasing etching time.