پديدآورندگان :
Akhtarianfar Seyed Farshad Institute of Nanoscience and Nanotechnology, University of Kashan 87317-51167 , Iran-4Optomechatronics Research Institute, Pusan National University (PNU), Busan 46241, Republic of Korea , Won Hong Suck Department of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University (PNU), Busan 46241, Republic of Korea , khayatian Ali Department of Physics, University of Kashan, Kashan 87317-51167, Iran , Almasi kashi Mohammad Institute of Nanoscience and Nanotechnology, University of Kashan 87317-51167 , Iran-Department of Physics, University of Kashan, Kashan 87317-51167, Iran
چكيده فارسي :
We present a fabrication of a field-effect transistor device based on a single ZnO nanowire and graphene
nanoribbon heterostructures. We demonstrate that it is possible to fabricate a graphene nanoribbon using a
single ZnO nanowire as a shadow mask for oxygen reactive ion etching. Au electrodes were also coated on
two sides of ZnO nanowire using UV photolithography. The fabricated nanowire/graphene nanoribbon
heterostructure was electrically analysed to obtain field effect properties of device.
