پديدآورندگان :
Arefinia Zahra Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran , Asgari Asghar Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran
چكيده فارسي :
The effect of nitrogen concentration on the intrinsic losses of solar cells comprised of InAs(1-x)Nx quantum
dots (QDs) embedded within intrinsic layer of AlP0.5Sb0.5 p-i-n solar cell is investigated through the calculation
of thermalisation and below band gap losses. A finite element method is used for solving Schrödinger equation
to calculate possible energy band configurations of AlP0.5Sb0.5: barrier/ InAs(1-x)Nx: QDs with different nitrogen
concentration. It is found that there is a minimum in the thermalisation and below band gap losses for nitrogen
concentration of 0.06
