پديدآورندگان :
Sattari-Esfahlan S. M. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran , Fouladi-Oskuei J. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran , Shojaei S. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran
چكيده فارسي :
Negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice is
investigated by adopted transfer matrix method within Landauer-Buttiker formalism. At the bias voltage of
100 mV, delocalization appeares by Wannier-Stark states causes tunneling peak current in current-voltage
characteristics. Results showd that the tunable PVR in PGSL resonant tunneling diode can be achievable by
modolation of external bias voltage and structural parameters engineering.
