شماره ركورد كنفرانس
4334
عنوان مقاله
Graphene Superlattice Based Resonant Tunneling Diode
پديدآورندگان
Sattari-Esfahlan S. M. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran , Fouladi-Oskuei J. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran , Shojaei S. Photonics Department, Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, 51665-163 Tabriz, Iran
تعداد صفحه
1
كليدواژه
Diode
سال انتشار
1396
عنوان كنفرانس
پنجمين گردهمايي بين المللي سالانه سيستم هاي ابعاد پايين
زبان مدرك
انگليسي
چكيده فارسي
Negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice is
investigated by adopted transfer matrix method within Landauer-Buttiker formalism. At the bias voltage of
100 mV, delocalization appeares by Wannier-Stark states causes tunneling peak current in current-voltage
characteristics. Results showd that the tunable PVR in PGSL resonant tunneling diode can be achievable by
modolation of external bias voltage and structural parameters engineering.
كشور
ايران
لينک به اين مدرک