Effect of Al composition on the total sheet carrier resistivity of Al Ga N /GaN x 1x High Electron Mobility Transistors

An analytical- Numerical model for the total sheet carrier resistivity of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately the effects of Al doping on the sheet carrier resistivity in at different temperature . In addition, the combined contributions from each of the individual electron scattering mechanisms are taken into account. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well and three dimensional( 3D )carrier resistivity in barrier AlGaN take in to account. Close agreement with the experimental data confirms the validity of the present model.