شماره ركورد كنفرانس :
4408
عنوان مقاله :
Enhanced Open-circuit Voltage Using Al2O3 Inert Layer in Perovskite Solar Cells
پديدآورندگان :
Ghorbani Koltapeh A. Tarbiat Modares University, , Mardekatani Asl F. Tarbiat Modares University, , Abdollahi Nejand B. Tarbiat Modares University, , Moravvej-Farshi M. K. Tarbiat Modares University,
كليدواژه :
reactive magnetron sputtering , passivation , Al2O3 , recombination , perovskite solar cell
عنوان كنفرانس :
بيست و جهارمين كنفرانس ملي اپتيك و فوتونيك ايران و دهمين كنفرانس ملي مهندسي و فناوري فوتونيك ايران
چكيده فارسي :
We investigate the effect of Al2O3 thin film deposited on an electron transfer layer (ETL: mp-TiO2 ) in the perovskite solar cells with the conventional structure of FTO/c-TiO2/mp-TiO2/CH3NH3PbI3/spiro-OMeTAD/Au. Using the rotational angular deposition method to deposit a nanolayer of insulating Al2O3 by the reactive magnetron sputtering (RMS), as a passivating layer, we compare the open-circuit voltage (VOC) of the perovskite solar cells with and without Al2O3. The comparison shows the passivated cells has a higher VOC. We observe the same effect for solar cells with and without the hole transfer layer (HTL: spiro-OMeTAD). The Al2O3 nanolayer decreases the recombination centers, leading to higher VOC and cell efficiency.
