Investigation of the Effect of La+3, Ba+2, Fe+3 and Mg+2 Dopants on Electrical Properties of PZTN Ceramics

In this research, it has been investigated the effect caused by electron isovalent, donor and acceptor dopants on Nb+5-doped PZT compositions close to the morphotrophic phase boundary (MPB) that have been synthesized by solid state reaction route. XRD studies were carried out to confirm the phase formation for ZT, PZTN and La, Ba, Fe and Mg-doped PZTN samples. Piezoelectric charge coefficient and dielectric constant measurements of samples were carried out by varying the type of the added dopants with similar concentration to PZTN compositions. The d33 of PZTN and La, Ba, Fe and Mg-doped PZTN compositions were found 359, 310, 304, 321 and 276 PC/N and the r of them were found 1402, 1280, 1069, 1256, 884. Scanning electron microscopy (SEM) studies were carried out to measure the grain size, the density and its effect on piezoelectric and dielectric constants. The density (98%) and the obtained properties (d33: 359 PC/N, r: 1402) of PZTN sample are shown the highest values and tan value (2/1) of PZTN was the lowest.