شماره ركورد كنفرانس :
4664
عنوان مقاله :
A combination of silicon pores and cracks fabricated via photo-assisted electrochemical etching
پديدآورندگان :
Fallahazad Parisa n.naderi@merc.ac.ir Materials and Energy Research Center , Taherkhani Morteza n.naderi@merc.ac.ir Materials and Energy Research Center , Naderi Nima n.naderi@merc.ac.ir Materials and Energy Research Center
كليدواژه :
porous silicon , photoelectrochemical Etching , light trapping
عنوان كنفرانس :
چهاردهمين سمينار ملي سالانه الكتروشيمي ايران
چكيده فارسي :
The modifying surface of silicon is one of the ways that improve the conversion efficiency of silicon-based device. The photoelectrochemical etching of n-type silicon (100) surface was performed using (HF:C2H6O:H2O2) solution with a constant current density of 40 mA cm−2. The morphology of the porous silicon was obtained using a Field-Emission Scanning Electron Microscope (FE-SEM). Influence of time on etched wafers was studied.
