شماره ركورد كنفرانس
4664
عنوان مقاله
A combination of silicon pores and cracks fabricated via photo-assisted electrochemical etching
پديدآورندگان
Fallahazad Parisa n.naderi@merc.ac.ir Materials and Energy Research Center , Taherkhani Morteza n.naderi@merc.ac.ir Materials and Energy Research Center , Naderi Nima n.naderi@merc.ac.ir Materials and Energy Research Center
تعداد صفحه
3
كليدواژه
porous silicon , photoelectrochemical Etching , light trapping
سال انتشار
1397
عنوان كنفرانس
چهاردهمين سمينار ملي سالانه الكتروشيمي ايران
زبان مدرك
انگليسي
چكيده فارسي
The modifying surface of silicon is one of the ways that improve the conversion efficiency of silicon-based device. The photoelectrochemical etching of n-type silicon (100) surface was performed using (HF:C2H6O:H2O2) solution with a constant current density of 40 mA cm−2. The morphology of the porous silicon was obtained using a Field-Emission Scanning Electron Microscope (FE-SEM). Influence of time on etched wafers was studied.
كشور
ايران
لينک به اين مدرک