شماره ركورد كنفرانس :
4664
عنوان مقاله :
Modifying Porous Silicon with surfactant for Optoelectronic Applications: the Influence of triton on the pore characteristics
پديدآورندگان :
Taherkhani Morteza n.naderi@merc.ac.ir Materials and Energy Research Center , Fallahazad Parisa n.naderi@merc.ac.ir Materials and Energy Research Center , Naderi Nima n.naderi@merc.ac.ir Materials and Energy Research Center
كليدواژه :
porous Silicon , electrochemical Etching , surfactant ,
عنوان كنفرانس :
چهاردهمين سمينار ملي سالانه الكتروشيمي ايران
چكيده فارسي :
The electrochemical etching of p-type silicon (100) surface was performed using HF / Triton solution. The presence of surfactant in etching solution cause to increase pore diameter and as well as effect in the distribution range of porosity. The morphology of porous silicon (PS) were obtained using a Field- Emission Scanning Electron Microscope (FE-SEM).
