پديدآورندگان :
Alipour Kamran Parisa p.alipourkamran@gmail.com Faculty of Science, Sahand University of Technology, Sahand, Iran; E-mail: , Shojaei S.H. Reza shojaei@sut.ac.ir Faculty of Science, Sahand University of Technology, Sahand, Iran; Phone: 04133459074 E-mail: , Ruhzendeh Parinaz parinaz.rouhzendeh@yahoo.com Faculty of Science, Sahand University of Technology, Sahand, Iran; E-mail:
كليدواژه :
Direct , Indirect Band Gap , Phosphorene , Uniaxial Strain
چكيده فارسي :
The effect of uniaxial and biaxial strain on the structural and electronic properties of phosphorene has been extensively studied in this work. This study was performed using the plane-wave pseudopotential approach within the framework of the first-principles density functional theory (DFT) implemented using the Quantum Espresso code. Band structure of phosphorene is considerably affected under the applied strains and a direct-indirect band gap transition is also noticed.
