بررسي اثر هال در صفحه گرافين براي نانو سنسورهاي مغناطيسي در تكنولوژي CMOS

Analysis of Hall Effect in graphene plane for magnetic Nano_Sensors in CMOS technology

در اين مقاله به بررسي و شبيه سازي يك نانو سنسور اثر هال پرداخته ايم و آن را با سيليسين (شكل دو بعدي سيليكن) مقايسه مي كنيم . در اين سنسور از گرافين استفاده شده است داراي ويژگي هاي شگرفي مي باشد و موجب مي شود كه پاسخ هاي خوبي حاصل شود .در نهايت با بررسي پارامتر هاي مختلف ساختار آن به يك سنسور بهينه شده دست بافته ايم .

This thesis deals with Hall-effect nano-sensors. Hall sensors can detect and measure magnetic fields. Hall sensors have enormous applications in the industry and research activities. Graphene is a two-dimensional sheet of Carbon atoms, i.e. one layer crystal of Carbon atoms. Due to special features like high electron mobility and near zero band-gap, Graphene has attracted interests in the electronics research community. In this research a Hall effect nano sensor based on Graphene is investigated and compared with silicon counterpart. Using extensive simulations, an optimized Graphene-based Hall sensor is designed. In order to gain highest sensitivity, sensor dimensions and contacts are optimized. The proposed sensor has linear output up to 0.5 Tesla of magnetic field. Due to nano-scale dimensions, this sensor has many potential applications. Moreover, it can be integrated with electronic devices in a single chip.