Study and investigation TCTA as a hole transport layer in the organic light-emitting diode

In this study, An Organic Light Emitting Diode (OLED) is fabricated by ITO/TCTA/Alq3/LiF/Al structure. TCTA as a hole transport layer in various thickness deposited by thermal evaporation method on the ITO. The thermal evaporation method was also used for deposition Alq3 as the emission layer and the LiF/Al layer as a cathode. The effect of TCTA hole-transporting layer thickness on the electrical and optical properties of OLED devices are studied; such as light intensity, threshold voltage. The current-voltage density characteristic and electroluminescent were investigated. The best thickness for the hole transport layer according to maximum electroluminescent and minimum threshold voltage is 20nm. In order to achieve the high efficiency in OLEDs, a Quantum well as a hole transport layer is being introduced, The best device turns on in 3(V) and the highest luminescence of the device is 1700 cd/m2.