Numerical investigation of the light Extraction of the planar perovskite light emitting diode (P-PeLED)

Numerical investigation of the light Extraction of the planar perovskite light emitting diode (P-PeLED)

Using the finite element numerical method, we have simulated a planar light emitting diode (LED) based on CH3NH3PbBr3 perovskite material at 530 nm wavelength. The study of the changes in the thickness of the active area of the diode indicates that the only limiting factor of the external quantum efficiency (EQE) of the diode is not the difference between the refractive indices of the carrier transfer layers and the perovskite layer, the thickness of the active region (perovskite) also plays a decisive role. It has been shown that by optimizing the thickness of the layer, it is possible to create a suitable increase in the o light extraction efficiency (LEE) amount of the diode without creating complexity in the structure.