Tunable Ring Oscillators Based on Hybrid FGMOS/CNTFET Inverters with High Frequency and Low Power

In this article, two tunable ring oscillators based on FGMOS/CNTFET inverters are presented. The suggested inverters in the structure of these ring oscillators are a combination of FGMOS technique and CNTFET transistor. Based on the simulations made with HSPICE software and the results obtained in 32 nm technology and 0.8 V supply voltage, the oscillation frequency of these oscillators is in the adjustment range from 0.621-1.85 GHz and 0.427-1.345 GHz, respectively. The power consumption of the proposed oscillators varies from 5.31-20.18 µW and from 3.22-13.65 µW in the range of frequency adjustment. Power delay product (PDP) has been evaluated as a figure of merit (FOM) in this research. Based on the obtained results, in the range of frequency tuning, the PDP value for the proposed designs is in the range of 1.425-1.816 fJ and 1.256-1.799 fJ, respectively. The PDP of the proposed designs are extremely low compared to the advanced and up-to-date techniques, which makes these designs very suitable for low power and high frequency applications.