High Breakdown Voltage and Reduced Temperature in LDMOS Transistor with Buried Oxide Engineering

In this paper a new LDMOS transistor is proposed to have high breakdown voltage and lower specific on-resistance using GaN. The GaN material with wider bandgap than silicon is useful to have better behavior in the LDMOS transistor. Moreover, the application of the LDMOS will be improved as it is compared with conventional LDMOS transistor. The simulation of the proposed Omega shape GaN window in the buried oxide of the LDMOS transistor (OG-LDMOS) with ATLAS simulator shows that replacing GaN with oxide reduces maximum lattice temperature in the device. So, the proposed structure could be an important device in power technology with high breakdown voltage and low temperature.