شماره ركورد كنفرانس :
2498
عنوان مقاله :
Effect of Multiplication Region Mole Fraction on Characteristics ofAPDs
پديدآورندگان :
Masudy-Panah نويسنده , Ahmadi V. نويسنده 2 Electrical Engineering Department, Faculty of Engineering, Tarbiat Modares University, Tehran, Islamic Republic of Iran
كليدواژه :
AlxGa1-xAs, nonlocalized ionization coefficien , Avalanche photodiodes (APDs , recurrence equation
عنوان كنفرانس :
مجموعه مقالات چهاردهمين همايش كنفرانس لپيتك و فوتونيك ايران
چكيده فارسي :
Abstract- In this paper we investigate the performance of avalanche photodiode considering the variation of
multiplication region mole fraction. We show that excess noise factor and breakdown voltage, at a given bias
voltage, increase for higher mole fraction of Al in AlxGa1-xAs-APDs but on the other hand, performance factor
and mean gain decrease inversely. For calculation of the static characteristics of AlxGa1-xAs-APDs we use the
dead space multiplication theory (DSMT).
Index Terms: Avalanche photodiodes (APDs), recurrence equation, AlxGa1-xAs, nonlocalized ionization coefficient.
PACS: avalanche photodiode (040.1345), optoelectronics (250.1345)
شماره مدرك كنفرانس :
3954869
