Modeling Electrical Behaviour and Temperature Dependency of Amorphous Thin Film Solar Cells

Modeling Electrical Behaviour and Temperature Dependency of Amorphous Thin Film Solar Cells

Introducing Ge atoms to the Si lattice in Si-based solar cells are an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced withoutdeteriorating its open circuit voltage. In this work a new modeling approach is developed and used for optimization andefficiency enhancement of single and double junction heterostructure solar cells based on the optimization of i-layer and player properties. Also the temperature dependency of theelectrical behaviour of the amorphous silicon thin film heterostructure solar cell such as I-V curve and Electron current density is investigated. After optimizing the parameters of i-layer and p-layer of solar cell, a double-junction solar cell with JSC=267A/m2, VOC=1.13V, FF=0.795, and efficiency of 23.5% has been achieved at T=300 K.