شماره ركورد كنفرانس :
2727
عنوان مقاله :
A Complementary Self - Biased CMOS Amplifier for Very Low Noise X-Band Amplification
عنوان به زبان ديگر :
A Complementary Self - Biased CMOS Amplifier for Very Low Noise X-Band Amplification
پديدآورندگان :
Yarahmadi Ahmad نويسنده Tarbiat Modares University - Dept. electrical and computer engineering , Jannesari Abumoslem نويسنده Tarbiat Modares University - Dept. electrical and computer engineering
كليدواژه :
CMOS inverter cell , resistive feedback technique , self-biased circuit , X band applications , gate peaking technique
عنوان كنفرانس :
اولين كنفرانس بين المللي دستاوردهاي نوين پژوهشي در مهندسي برق و كامپيوتر
چكيده لاتين :
This paper presents a low noise amplifier (LNA) in TSMC 0.18μm CMOS technology for X band applications. The
amplifier has two CMOS inverter cells, cascaded together to achieve a flat and high enough gain. Furthermore, the first
inverter cell should provide wideband input impedance matching. For this purpose, resistive shunt feedback is applied to
the both inverters. By using this technique, the LNA will be selfbiased and it does not need any additional bias circuit. A gate
peaking technique is also applied to the both inverters to compensate the parasitic capacitance of MOS transistors at high
frequencies. The proposed LNA delivers a maximum power gain of 13dB with a gain flatness of 1.35dB within the interested band. The circuit exhibits good noise performance and the noise figure (NF) is 2.06< NF <3.28. The LNA consumes 8.2mW from a 1.8V supply while providing IIP3 of about -10dBm.
شماره مدرك كنفرانس :
4240260
