A Complementary Self - Biased CMOS Amplifier for Very Low Noise X-Band Amplification

A Complementary Self - Biased CMOS Amplifier for Very Low Noise X-Band Amplification

This paper presents a low noise amplifier (LNA) in TSMC 0.18μm CMOS technology for X band applications. The amplifier has two CMOS inverter cells, cascaded together to achieve a flat and high enough gain. Furthermore, the first inverter cell should provide wideband input impedance matching. For this purpose, resistive shunt feedback is applied to the both inverters. By using this technique, the LNA will be selfbiased and it does not need any additional bias circuit. A gate peaking technique is also applied to the both inverters to compensate the parasitic capacitance of MOS transistors at high frequencies. The proposed LNA delivers a maximum power gain of 13dB with a gain flatness of 1.35dB within the interested band. The circuit exhibits good noise performance and the noise figure (NF) is 2.06< NF <3.28. The LNA consumes 8.2mW from a 1.8V supply while providing IIP3 of about -10dBm.