شماره ركورد كنفرانس :
1730
عنوان مقاله :
Design of 0.5V, 450μW CMOS Current Reuse LNA With the Gate Resistance Used for Input Matching and Forward Body Bias Technique
عنوان به زبان ديگر :
Design of 0.5V, 450μW CMOS Current Reuse LNA With the Gate Resistance Used for Input Matching and Forward Body Bias Technique
پديدآورندگان :
Kargaran Ehsan نويسنده , Izadpanah Tous Saber نويسنده , Ravari Mohammad Mahdi نويسنده , Dehqan Ali Reza نويسنده , Mafinezhad Khalil نويسنده , Nabovati Hooman نويسنده
كليدواژه :
Forward body bias , Current reuse , Ultra low power , Ultra low voltage , Parasitic input resistance , low noise amplifier LNA
عنوان كنفرانس :
بيستمين كنفرانس مهندسي برق ايران
چكيده لاتين :
In this paper, design and simulation results of a fully integrated 5-GHz CMOS LNA is presented. To design this LNA, the parasitic input resistance of a MOSFET is converted to 50Ω by a simple L–C network, hence eliminating the need for source degeneration. As it is analytically shown, this is because the former methods enhance the gain of the LNA by a factor that is inversely proportional to MOSFET’s input resistance. By employing the current reuse and forward body bias technique, the proposed LNA can operate at reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 12.6 dB with a noise figure of 3.9 dB, while consuming only 450μW dc power with an ultra low supply voltage of 0.5V. The power consumption figure of merit
شماره مدرك كنفرانس :
4460809
