Author/Authors :
Benhaliliba, M USTOMB University - Physics Faculty - Material Technology Department, Algeria , Ocak, YS Dicle University - Education Faculty - Science Department, Turkey , Mokhtari, H USTOMB University - Physics Faculty - Material Technology Department, Algeria , Benouis, CE USTOMB University - Physics Faculty - Material Technology Department, Algeria , Aida, MS Mentouri University - Thin Films Plasma Lab , Physics Department, Algeria
Title Of Article :
The microelectronic parameters of Al /ZnO/p-Si/Al Schottky diode for solar cell applications
Abstract :
Microelectronics properties of Al/ZnO/p-Si/Al Schottky diode have been investigated. ZnO filmshave grown onto p type silicon substrate by ultrasonic spray pyrolysis @ 350°C. Al front contactshave been deposited by thermal evaporation process in vacuum at 10-6 Torr. The current-voltage(I-V) characteristics show a good rectifying profile around 1900. The extracted parameters in darkand light (150 mW/cm^²) conditions: ideality factor (n), barrier height ΦB, series resistance Rs arerespectively found to be 3.5 and 1.6, 0.74 eV and 0.89 eV, 5 kΩ and 1.6 kΩ, respectively. Effectof temperature, varied within the range of 22-107 ° C, on the I-V characteristics was emphasized.Dark and illumination characteristics were also studied. Finally, we accomplished the study by themeasurement of capacitance-voltage (C-V) characteristics as a result of frequency.
NaturalLanguageKeyword :
Ultrasonic spray pyrolysis , ZnO film , I , V characteristics , Dark and illumination exposure , Rectifying profile
JournalTitle :
dicle university journal of institute of natural and applied science
