Author/Authors :
KURT, Hilal Yücel Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , KALKAN, Gülcan Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , ÖZER, Metin Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , TANRIVERDİ, Evrim Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , YİĞİT, Duygu Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey
Title Of Article :
The Effect of The Oxidation on GaAs Semiconductor Surface to the System Characteristics in A Double-Gapped Plasma Cell
شماره ركورد :
15801
Abstract :
The system characteristic in a double gap gas discharge plasma cell with GaAs cathode has been identified to be unstable due to the oxidation, experimentally. The experimental studies include the system characteristics in a wide range of pressures (p = 28 – 342 Torr), interelectrode distances (d1 = 50 μm d2 = 50 – 320 μm) and semiconductor cathode diameter D (9 mm). Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined.
From Page :
161
NaturalLanguageKeyword :
Gas discharge , GaAs , plasma , oxidation , double gap
JournalTitle :
Journal Of Polytechnic
To Page :
165
Link To Document :
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