Author/Authors :
KARADUMAN, Irmak Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , BARİN, Özlem Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , YILDIZ, Dilber Esra Hitit Üniversitesi - Fen-Edebiyat Fakültesi - Fizik Bölümü, Turkey , ACAR, Selim Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey
Abstract :
Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO2 environment clean and reliable use of the H2 gas as the energy source of the future are expanded in various fields. In this case, the new research on the rapidly expanding field of applications and H2 gas sensor causes the increase. In this study, HfO2 thin films are grown on the p-Si by Atomic Layer Deposition (ALD) method and HfO2/p-Si thin film was produced. HfO2/p-Si structure is grown by Atomic Layer Deposition method and hydrogen gas sensing properties were investigated. Produced sample at different temperatures (30 °C-180 °C) and at different gas concentrations (1000ppm-4000ppm) as a function of time is investigated with measuring the electrical properties. Measurement results show that HfO2/p-Si thin films produced by ALD can be used as low temperatures hydrogen gas sensors.
