Author/Authors :
HEMAIZIA, Z. Med Khider University - Laboratory of Metallic and Semiconducting Materials, Algeria , SENGOUGA, N. Med Khider University - Laboratory of Metallic and Semiconducting Materials, Algeria , MISSOUS, M. Manchester University - School of Electronic and Electrical Engineering, UK
Abstract :
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate- length novel high breakdown InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate.
