Author/Authors :
MEGHERBI, M.L. Mohammed Kheider University - Laboratory of Metallic and Semiconducting Materials, Algeria , DEHIMI, L. Elhadj Lakhdar University - Faculty of Science, Algeria , SAADOUNE, A. Mohammed Kheider University - Laboratory of Metallic and Semiconducting Materials, Algeria , TERGHINI, W. Mohammed Kheider University - Laboratory of Metallic and Semiconducting Materials, Algeria , PEZZIMENTI, F. Mediterranean University of Reggio Calabria - Faculty of engineering - DIMET, Italy , DELLA CORTE, F.G. Mediterranean University of Reggio Calabria - Faculty of engineering - DIMET, Italy
Abstract :
In this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigated experimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performed using proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and hole minority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved and well behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrier lifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. We achieved a good agreement between simulations and measured data. The measured and the simulated forward characteristics indicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies of about 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.
NaturalLanguageKeyword :
p , i , n diode , silicon carbide , silvaco , device simulation , lifetimes
