Author/Authors :
bennaceur, k. university of biskra - physics of thin films and applications laboratory, Algeria , attaf, a. university of biskra - physics of thin films and applications laboratory, Algeria , saidi, h. university of biskra - physics of thin films and applications laboratory, Algeria , hamani, n. university of biskra - physics of thin films and applications laboratory, Algeria , lehraki, n. university of biskra - physics of thin films and applications laboratory, Algeria
Abstract :
In this present work, undoped and Indium doped tin dioxide were deposited on glass substrate by Ultrasonic spray method. We investigated the effect of deposition conditions to obtain In doped SnO2 thin films with various concentration (1 to 8 wt.%). XRD analysis confirmed that SnO2 thin films crystallize in the tetragonal structure of SnO2. The grain size average decreases with In content increase. We found that the maximum films transmittance varies from 65-93% in the visible range of the spectrum. The films optical gap varies between 3.48 and 3.80 eV. However, we have noticed that the sheet resistance increases up to 880*103 (Ω/sqr) with increasing the in doping concentration. Owing to their high optical gap and high sheet resistance; the prepared films can be employed in optoelectronic devices.
NaturalLanguageKeyword :
Tin dioxide , thin films , semiconductor doping , ultrasonic spray method
