Author/Authors
GENÇYILMAZ, Olcay Eskişehir Osmangazi Üniversitesi - Fen Edebiyat Fakültesi - Fizik Bölümü, Turkey , GENÇYILMAZ, Olcay Çankırı Karatekin Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , ATAY, Ferhunde Eskişehir Osmangazi Üniversitesi - Fen Edebiyat Fakültesi - Fizik Bölümü, Turkey , AKYÜZ, İdris Eskişehir Osmangazi Üniversitesi - Fen Edebiyat Fakültesi - Fizik Bölümü, Turkey
Title Of Article
Effects of Thermal Annealling Process on Optical, Electrical and Surface Properties of ZnO Semiconductor Films
شماره ركورد
25268
Abstract
In this study, ZnO semiconductor films were deposited on the glass substrates by ultrasonic spray pyrolysis (USP). All of the films were annealed at different temperatures to improve the physical properties and the effect of annealing on the electrical, optical and surface properties was investigated. Transmittance and absorbance spectra of ZnO films were examined using UV-VIS spectrophotometer. Band gap values of the films were determined by optical method. Also, thicknesses, refractive index (n) and extinction coefficient (k) values of the films were determined by spectroscopic ellipsometry (SE). The surface topography and roughness values of ZnO films were investagetated by Atomic Force Microscopy (AFM). Electrical resistivities of the films were determined using four probe technique. According to results; some physical properties of ZnO films were improved with annealling process and potential the of ZnO films was searched in various technological area.
From Page
56
NaturalLanguageKeyword
Ultrasonic chemical spray pyrolysis , ZnO , Spectroscopic ellipsometry , Atomic force microscopy
JournalTitle
Journal Of Natural and Applied Sciences
To Page
60
JournalTitle
Journal Of Natural and Applied Sciences
Link To Document