Author/Authors
Sönmezoğlu, Savaş Karamanoğlu Mehmetbey Üniversitesi - Kamil Özdağ Fen Fakültesi - Fizik Bölümü, Turkey , Akın, Seçkin Karamanoğlu Mehmetbey Üniversitesi - Kamil Özdağ Fen Fakültesi - Fizik Bölümü, Turkey
Title Of Article
The Determination of Series Resistance Parameter of Sb‐Doped TiO2 / n‐ Si MIS Structure by Capacitance‐Voltage (C‐V) Method
شماره ركورد
27511
Abstract
In this study, the basic electrical parameters of the Sb‐doped TiO2/n‐Si MIS diode such as seriesresistance and barrier height were calculated and analyzed with the help of I‐V and C‐V characteristics. Ideality factor, barrier height and series resistance values obtained from the I‐V characteristics were determined 2.79, 0.68 eV and 4118 Ω, respectively. Barrier height and series resistance values from the C‐V characteristics were determined as 1.94 eV and 10.45 Ω, respectively. The causes of the difference between the value of barrier height obtained from the C‐V method and the value of barrier height obtained from the I‐V method may be interfacial states, series resistance effect and presence of the interfacial layer. When the interlayer is thick, the parameters obtained from the C‐V method such as series resistance and barrier height provide more accurate and reliable results than I‐V method.
From Page
1
NaturalLanguageKeyword
C‐V characteristic , I‐V characteristic , Series resistance , Barrier height , Interfacial states
JournalTitle
Afyon Kocatepe University Journal Of Science and Engineering
To Page
8
JournalTitle
Afyon Kocatepe University Journal Of Science and Engineering
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