مرکز منطقه ای اطلاع رساني علوم و فناوري - The Effect of Interface States and Series Resistance on Current-Voltage Characteristics in (MIS) Schottky Diodes

Abstract :

The current-voltage (I-V) characteristics of metal-insulator-semiconductor (MIS) Al/Si3N4/p-Si Schottky barrier diodes (SBDs) were measured at room temperature. Al/Si3N4/p-Si structure has been fabricated by the electrochemical anodization method. The surface of p-type Si was passivated by nitridation process. Effects series resistance Rs , interfacial layer and interface states density (Nss) on I-V characteristics were investigated. Al/Si3N4/p-Si (MIS) Schottky barrier diodes showed that rectifying behavior with an ideality factor value of 6.17 and barrier height value of 0.714 eV obeys a metalinterfacial layer – semiconductor (MIS) structure rather than an ideal Schottky diode due to the existence of Si3N4 at the Al/p-Si interfacial layer. The values of series resistance ( Rs ) were determined using Cheung’s method. In addition, interface states density ( Nss) as a function of (Ess-Ev) was extracted from the bias I-V measurements with and without taking into account the series resistance. The I-V characteristics confirmed that the distribution of Nss , Rs and interfacial insulator layer are important parameters that influence the electrical characteristics of MIS Schottky diodes.